PDN3912S mosfets equivalent, n-channel mosfets.
* 30V,6.5A, RDS(ON) =24mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* MB.
SOT23-3S Pin Configuration
D
S G
G
D S
BVDSS 30V
RDSON 24m
ID 6.5A
Features
* 30V,6.5A, RDS(ON) =24mΩ @VGS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download